据日经BP社报道，恩智浦-台积电研究中心（NXP-TSMC Research Center）近日开发出了把尖端CMOS LSI的布线中使用的材料用于MEMS元件封装的方法。该方法在把可动部的某个MEMS元件封入空穴的封装工艺中，使用了尖端LSI布线层中使用的low-k材料，从而把MEMS元件固有封装工艺向现有CMOS制造工艺靠近的技术。　　...

AI isn’t just a tool—it’s the foundation for building competitive advantage. In a recent post, we showed how chief marketing officers (CMOs) can move beyond AI experimentation to prove more value and ...

“We’re hoping that our ability to generate these thin films and integrate them in a scalable fashion can lead to something like CMOS-style revolution for diamond-based quantum technologies,” said Alex ...

A new technical paper titled “Novel Trade-offs in 5 nm FinFET SRAM Arrays at Extremely Low Temperatures” was published by researchers at University of Stuttgart, IIT Kanpur, National Yang Ming Chiao ...

单片 CMOS EIC或成为重要发展方向。对于需要极高集成度和功耗的 CPO ... 玻璃衬底表面的黏附性较差，容易导致RDL金属层异常，玻璃本身的易碎性和化学惰性给工艺开发带来了难度；TSV的通孔加工、孔填充都有较高的工艺要求，此外还涉及到晶圆减薄，存在潜在 ...

Canon has announced a 35mm full-frame CMOS sensor with a mindboggling 410 million pixels, the world's highest pixel count. The newly developed 410-megapixel CMOS sensor has a 24,592 x 16,704-pixel ...

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IT之家1 月 22 日消息，佳能今日宣布开发出具有 4.1 亿像素（24592 x 16704）的全画幅背照堆叠式 CMOS 传感器，这也是 35mm 全画幅相机中最高纪录。 大家这里只看数字的话对于 4.1 亿像素可能没什么概念，不过我们可以把它当作 24K 分辨率来理解，其像素数约为 FHD 的 ...

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